Marking
2SJ360
Z8
Lot No.
Note 4: A line to the right of a Lot No. identifies the indication of
Part No.
(or abbreviation code)
product Labels.
Without a line: [[Pb]]/INCLUDES > MCV
With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Note 4
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cut−off current
Drain−source breakdown
voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn−on time
Switching time
Fall time
Turn−off time
Symbol
Test Condition
IGSS
IDSS
VGS = ±16 V, VDS = 0 V
VDS = −60 V, VGS = 0 V
V (BR) DSS ID = −10 mA, VGS = 0 V
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VDS = −10 V, ID = −1 mA
VGS = −4 V, ID = −0.5 A
VGS = −10 V, ID = −0.5 A
VDS = −10 V, ID = −0.5 A
VDS = −10 V, VGS = 0 V, f = 1 MHz
tr
0V
VGS
ID = −0.5A
VOUT
−10V
ton
RL = 60Ω
tf
VDD ≒≈ −30V
toff
Duty ≦≤ 1%, tw = 10μs
Total gate charge (Gate−source
plus gate−drain)
Qg
VDD ≈ −48 V, VGS = −10 V,
Gate−source charge
Qgs
ID = −1 A
Gate−drain (“miller”) charge
Qgd
Min Typ. Max Unit
⎯
⎯
±10
μA
⎯
⎯ −100 μA
−60 ⎯
⎯
V
−0.8
⎯
−2.0
V
⎯ 0.86 1.2
Ω
⎯ 0.55 0.73
0.5 1.0
⎯
S
⎯ 155 ⎯
⎯
22
⎯
pF
⎯
75
⎯
⎯
17
⎯
⎯
20
⎯
ns
⎯
20
⎯
⎯ 100 ⎯
⎯
6.5
⎯
⎯
4.5
⎯
nC
⎯
2.0
⎯
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
⎯
⎯
IDR = −1 A, VGS = 0 V
IDR = −1 A, VGS = 0 V
dIDR / dt = 50 A / μs
Min Typ. Max Unit
⎯
⎯
−1
A
⎯
⎯
−4
A
⎯
⎯
1.8
V
⎯
50
⎯
ns
⎯
45
⎯
nC
2
2009-09-29