2SJ360 Ver la hoja de datos (PDF) - Toshiba
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2SJ360 Datasheet PDF : 6 Pages
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2SJ360
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV)
2SJ360
High Speed, High current Switching Applications
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Unit: mm
z 4-V gate drive
z Low drain−source ON resistance
: RDS (ON) = 0.55 Ω (typ.)
z High forward transfer admittance
: |Yfs| = 0.9 S (typ.)
z Low leakage current : IDSS = −100 μA (max) (VDS = −60 V)
z Enhancement mode : Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
−60
V
Drain−gate voltage (RGS = 20 k Ω)
VDGR
−60
V
Gate−source voltage
VGSS
±20
V
Drain current
DC (Note 1)
ID
Pulse (Note 1)
IDP
−1
A
−4
A
Drain power dissipation
PD
0.5
W
JEDEC
⎯
Drain power dissipation
(Note 2)
PD
1.5
W
JEITA
SC-62
Channel temperature
Storage temperature range
Tch
150
°C
Tstg
−55 to 150
°C
TOSHIBA
2−5K1B
Weight: 0.05 g (typ.)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to
ambient
Rth (ch−a)
250
°C / W
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2009-09-29
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