2SJ479L Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
2SJ479L Datasheet PDF : 7 Pages
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2SJ479(L), 2SJ479(S)
Silicon P Channel DV–L MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS(on) = 25 mΩ typ.
• 4V gate drive devices.
• High speed switching
Outline
LDPAK
4
4
D
1
2
3
G
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
S
ADE-208-541
1st. Edition
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