2SD1506 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Fabricante

2SD1506

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=1mA ,IB=0

V(BR)CBO Collector-base breakdown voltage

IC=50μA ,IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=50μA ,IC=0

VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A

VBEsat Base-emitter saturation voltage

IC=2A; IB=0.2A

ICBO

Collector cut-off current

VCB=40V; IE=0

IEBO

Emitter cut-off current

VEB=4V; IC=0

hFE

DC current gain

IC=0.5A ; VCE=3V

COB

Output capacitance

IE=0 ; VCB=10V,f=1MHz

fT

Transition frequency

IC=0.5A ; VCE=5V

‹ hFE Classifications

N

P

Q

R

56-120 82-180 120-270 180-390

Product Specification

2SD1506

MIN TYP. MAX UNIT

50

V

60

V

5

V

1.0

V

1.5

V

1.0 μA

1.0 μA

56

390

40

pF

90

MHz

2

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