2SD1991A Ver la hoja de datos (PDF) - TY Semiconductor

Número de pieza

componentes Descripción

Fabricante

2SD1991A

TO-92 Plastic-Encapsulate Transistors

TY Semiconductor 

Product specification

TO-92 Plastic-Encapsulate Transistors

2SD1991A TRANSISTOR (NPN)

FEATURES

z High Foward Current Transfer Ratio hFE

z Low Collector to Emitter Saturation Voltage VCE(sat).

z Allowing Supply with the Radial Taping.

TO-92

1. EMITTER

2. COLLECTOR

3. BASE

MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)

Symbol

Parameter

Value Unit

VCBO

Collector-Base Voltage

60

V

VCEO

Collector-Emitter Voltage

50

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current -Continuous

100

mA

PC

Collector Power Dissipation

400

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ uless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol Test conditions

V(BR)CBO IC=10μA,IE=0

V(BR)CEO IC=2mA,IB=0

V(BR)EBO IE=10μA,IC=0

ICBO

VCB=20V,IE=0

IEBO

VEB=7V,IC=0

hFE(1) VCE=10V,IC=2mA

hFE(2) VCE=2V,IC=100mA

VCE(sat) IC=100mA,IB=10mA

fT

VCE=10V,IC=2mA,f=200MHz

Cob

VCB=10V,IE=0,f=1MHz

Min

Typ Max

Unit

60

V

50

V

7

V

1

μA

1

μA

160

460

90

0.3

V

150

MHz

3.5

pF

CLASSIFICATION OF hFE(1)

Rank

Range

Q

160-260

R

210-340

S

290-460

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

1 of 1

Share Link: