2SC4988 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

2SC4988

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SC4988

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

VCBO

VCEO

VEBO

IC

PC

Tj

15

V

9

V

1.5

V

100

mA

800*1

mW

150

°C

Storage temperature

Tstg

–55 to +150

°C

Note: 1. This value is allowed when using the alumina ceramics board (12.5 x 20 x 0.7 mm)

Electrical Characteristics (Ta = 25°C)

Item

Collector to base breakdown

voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector output capacitance

Gain bandwidth product

Power gain

Symbol Min

V(BR)CBO

15

I CBO

—

I CEO

—

I EBO

—

hFE

50

Cob

—

fT

5.5

PG

7.5

Noise figure

NF

—

Note: Marking is “FR”.

Typ Max Unit

—

—

V

—

1

—

1

—

10

120 250

1.1 1.6

8.5 —

10.5 —

µA

mA

µA

pF

GHz

dB

1.3 2.5 dB

Test conditions

IC = 10 µA, IE = 0

VCB = 12 V, IE = 0

VCE = 9 V, RBE = ∞

VEB = 1.5 V, IC = 0

VCE = 5 V, IC = 20 mA

VCB = 5 V, IE = 0, f = 1 MHz

VCE = 5 V, IC = 20 mA

VCE = 5 V, IC = 20 mA,

f = 900 MHz

VCE = 5 V, IC = 5 mA,

f = 900 MHz

Attention: This device is very sensitive to electro static discharge.

It is recommended to adopt appropriate cautions when handling this transistor.

2

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