C2625 Ver la hoja de datos (PDF) - Thinki Semiconductor Co., Ltd.

Número de pieza

componentes Descripción

Fabricante

C2625

80 WATT NPN EPITAXIAL SILICON TRANSISTOR

Thinki Semiconductor Co., Ltd. 

2SC2625

®

Pb Free Plating Product

2SC2625

Pb

80 WATT NPN EPITAXIAL SILICON TRANSISTOR

Features

High voltage,High speed switching

High reliability

Applications

Switching regulators

Ultrasonic generators

High frequency inverters

General purpose power amplifiers

Collector

Base

Emitter

E

C

B

Fig.1 simplified outline (TO-3PB) and symbol

Maximum ratings and characteristics

Absolute maximum ratings (Tc=25°C unless otherwise specified)

Item

Collector-Base voltage

Collector-Emitter voltage

Collector-Emitter voltage

Emitter-Base voltage

Collector current

Base current

Collector power disspation

Operating junction temperature

Storage temperature

Symbol

VCBO

VCEO

VCEO(SUS)

VEBO

IC

IB

PC

Tj

Tstg

Ratings

450

400

400

7

10

3

80

+150

-55 to +150

Unit

V

V

V

V

A

A

W

°C

°C

Electrical characteristics (Tc =25°C unless otherwise specified)

Item

Collector-Base voltage

Collector-Emitter voltage

Collector-Emitter voltage

Emitter-Base voltage

Collector-Base leakage current

Emitter-Base leakage current

D.C. current gain

Collector-Emitter saturation voltage

Base-Emitter saturation voltage

*1

Switching time

Symbol

VCBO

VCEO

VCEO(SUS)

VEBO

ICBO

IEBO

hFE

VCE(Sat)

VBE(Sat)

ton

tstg

tf

Test Conditions

ICBO = 1mA

ICEO = 10mA

IC = 1A

IEBO = 0.1mA

VCBO = 450V

VEBO = 7V

IC = 4A, VCE = 5V

IC = 4A, IB = 0.8A

IC = 7.5A, IB1 = -IB2 = 1.5A

RL = 20 ohm ,Pw = 20µs Duty=<2%

Min.

450

400

400

7

10

Typ.

-

-

-

-

Max.

1.0

0.1

Units

V

V

V

V

mA

mA

1.2

V

1.5

V

1.0

µs

2.0

µs

1.0

µs

Thermal characteristics

Item

Thermal resistance

Symbol

Rth(j-c)

Test Conditions

Junction to case

Min. Typ.

Max. Units

1.55 °C/W

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