2SC4423 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SC4423 Datasheet PDF : 2 Pages
| |||
U.EII.E.U J$E.mi-CondiL<2toi
Cx
t/
, fine.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC4423
DESCRIPTION
• High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
• High Switching Speed
• Wide Area of Safe Operation
APPLICATIONS
• Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
500
V
VCEO Collector-Emitter Voltage
400
V
VEBO Emitter-Base voltage
7
V
Ic
Collector Current-Continuous
ICM
Collector Current-Peak
12
A
25
A
IB
Base Current-Continuous
Collector Power Dissipation
@ TC=25"C
PC
Collector Power Dissipation
@ Ta=25"C
Tj
Junction Temperature
4
A
55
W
3
150
'C
Tstg
Storage Temperature Range
-55-150
'C
f
1 2 3-
pIN 1 BASE
2. COLLECTOR
3. EMITTER
TO-3PML package
(•*- B •• i ,
1 Q,
i t ' ' '••:. A
4"
A
* ' •• '
.. - 1 '
• ~* Y -*-.
1
H
z
t
•9
K
G
T
mm
DIM MINI MAX
A 13.90 20.10
B 15.90 16.10
C 5.50 5.70
D 0.90 1.10
F 3.30 3.50
G 2.90 3,10
H 5.90 6.10
J 0.595 0.605
K 22,30 22.50
L 1.90 2.10
N 10.80 11.00
Q 4.90 5.10
R 3.75 3.95
S 3.20 3.40
u 9.90 10.10
Y 4.70 4.90
Z 1.90 2,10
N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions\vithout
notice. Information furnished hy N.I Semi-Conductorsis believed to he both accurate and reliable at the time of uoii
lo press. I lowever. N.I Serni-Condiictors assumes no responsibility for any errors or omissions discovered in its use.
\'.l Semi-Conduclors encourages customers to v e r i l y t h a t datasheets are c u r r e n t before placing orders.
Quality Semi-Conductors
Share Link: 