2SC3230 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SC3230 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
2SC3230
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= 10mA; IB= 0
V(8R)EBO Emitter-Base Breakdown Voltage
lE=1mA; lc=0
VcE(sat) Collector-Emitter Saturation Voltage lc= 2A; IB= 0.2A
VBE(OH) Base-Emitter On Voltage
lc= 0.5A; VCE= 2V
ICBO
Collector Cutoff Current
VOB= 20V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; lc= 0
hpE-1
DC Current Gain
lc= 0.5A; VCE= 2V
hFE-2
DC Current Gain
lc= 2.5A; VCE= 2V
fr
Current-Gain—Bandwidth Product
lc= 0.5A; VCE= 2V
COB
Output Capacitance
lE=0;VCB= 10V; f,est= 1.0MHz
MIN TYP. MAX UNIT
30
V
5
V
0.8
V
1.0
V
1.0
MA
1.0
uA
70
240
25
100
MHz
35
PF
hpE-1 Classifications
o
Y
70-140
120-240
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