2SC4765 Ver la hoja de datos (PDF) - New Jersey Semiconductor
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2SC4765 Datasheet PDF : 2 Pages
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J.E.IIS.U
CX
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, (inc..
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC4765
DESCRIPTION
• High Breakdown Voltage-
: VCBO= 1700V(Min)
• High Switching Speed
• Low Saturation Voltage
• Built-in Damper Diode
APPLICATIONS
• Horizontal deflection output for medium resolution display.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
';
i
v
1 23
PIN 1.BASE
2. COLLECTOR
3. EMITTER
TO-3P(H)IS package
„ ... .B
fo
iUf
if
A
... s -.-
F
f
VCBO Collector-Base Voltage
1700
V
VCEO Collector-Emitter Voltage
600
V
VEBO
Em itter-Base Voltage
5
V
Ic
Collector Current- Continuous
±5
A
ICP
Collector Current-Pulse
±10
A
IB
Base Current- Continuous
Collector Power Dissipation
PC
@ TC=25'C
Tj
Junction Temperature
2.5
A
50
W
150
°C
Tstg
Storage Temperature Range
-55-150 °c
jtT
_^
K
I
z
*• «t
G
t
*• -" J
--Q
•- R "
-*•
mm
DIM MIN MAX
A 24.30 24.70
B 15.20 15.80
c 5.20 5.80
D 0.65 0.85
I- 3.30 3.90
G 3.90 4.10
H 4.30 4.70
J 080 1.00
K 18.30 18,70
L 1.90 2.10
N 10.70 11.10
Q 4.40 4.60
R 3.30 3,70
S 3,20 3.40
u 9.50 9.70
y 1.90 2.10
z 1.40 1.60
N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. I lowever, N.I Semi-Conduetors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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