2SC5890 Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
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Fabricante
2SC5890 Datasheet PDF : 11 Pages
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC5890
DESCRIPTION
·High Gain Bandwidth Product
fT = 7.8 GHz TYP.
·High power gain and low noise figure ;
PG = 12 dB TYP., NF = 1.0 dB typ. @ f = 900 MHz
APPLICATIONS
·Designed for use in UHF ~ VHF wide band amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20
V
VCEO Collector-Emitter Voltage
12
V
VEBO Emitter-Base Voltage
1.5
V
IC
Collector Current-Continuous
Collector Power Dissipation
PC
@TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
75
mA
0.7
W
150
℃
-55~150
℃
isc website：www.iscsemi.cn
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