2SC4667 Ver la hoja de datos (PDF) - Toshiba

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Fabricante

2SC4667

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

Toshiba 

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC4667

Ultra High Speed Switching Applications

Computer, Counter Applications

2SC4667

Unit: mm

· High transition frequency: fT = 400 MHz (typ.)

· Low saturation voltage: VCE (sat) = 0.3 V (max)

· High speed switching time: tstg = 15 ns (typ.)

Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Collector power dissipation

Junction temperature

Storage temperature range

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

Rating

Unit

40

V

15

V

5

V

200

mA

40

mA

100

mW

125

°C

-55~125

°C

Marking

JEDEC

―

JEITA

SC-70

TOSHIBA

2-2E1A

Weight: 0.006 g (typ.)

1

2003-03-27

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