2SC5621 Ver la hoja de datos (PDF) - Isahaya Electronics

Número de pieza

componentes Descripción

Fabricante

2SC5621

FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

Isahaya Electronics 

DESCRIPTION

2SC5621 is a super mini package resin sealed silicon NPN

epitaxial transistor.It is designed for high frequency

application.

FEATURE

・High gain bandwidth product.

fT=4.5GHz

・High gain,low noise.

・Can operate at low voltage.

・Super mini package for easy mounting.

〈SMALL-SIGNAL TRANSISTOR〉

2SC5621

FOR HIGH FREQUENCY AMPLIFY APPLICATION

SILICON NPN EPITAXIAL TYPE

OUTLINE DRAWING

1.6

0.4 0.8 0.4

U n i t :mm

1

3

2

APPLICATION

For TV tuners,high frequency amplifier,celluar phone

system.

MAXIMUM RATINGS (Ta=25℃)

Symbol

Parameter

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Collector to Base voltage

Collector to Emitter voltage

Emitter to Base voltage

Collector current

Collector dissipation

Junction temperature

Storage temprature

Ratings

20

12

3

50

100

+125

-55~+125

Unit

V

V

V

mA

mW

℃

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃)

Symbol

Parameter

Test conditions

I CBO

I EBO

hFE

fT

Cob

S212

NF

Collector cut off current

Emitter cut off current

DC forward current gain

Gain bandwidth product

Collector output capacitance

Insertion power gain

Noise figure

VCB=10V, I E=0mA

VEB=1V, IC=0mA

VCE=5V, I C=20mA

VCE=5V, I E=20mA

VCB=5V, I E=0mA, f =1MHz

VCE=5V, I C=20mA, f =1GHz

VCE=5V, I C=5mA, f =1GHz

TERMINAL CONNECTOR

1 : BASE

2 : EMITTER

3 : COLLECTOR

EIJA:

MARKING

GW

TYPE NAME

hFE ITEM

Limits

Unit

Min

Typ

Max

1.0

μA

1.0

μA

50

250

4.5

GHz

1.0

pF

7.5

9.0

dB

1.5

dB

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