2SC5624 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
2SC5624 Datasheet PDF : 8 Pages
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2SC5624
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Pc
Tj
Tstg
Ratings
Unit
10
V
3.5
V
0.8
V
35
mA
100
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit Test Conditions
Collector to base breakdown V(BR)CBO
10
—
—
V
voltage
IC = 10 µA , IE = 0
Collector cutoff current
I CBO
Collector cutoff current
I CEO
Emitter cutoff current
I EBO
DC current transfer ratio
hFE
Collector output capacitance Cob
—
—
1
µA
VCB = 8 V , IE = 0
—
—
1
µA
VCE = 3 V , RBE = ∞
—
—
10
µA
VEB = 0.8 V , IC = 0
60
100
140
V
VCE = 2 V , IC = 20 mA
—
0.3
0.6
pF
VCB = 2 V , IE = 0
f = 1 MHz
Gain bandwidth product
fT
25
28
—
GHz
VCE = 2 V , IC = 30 mA
f = 2 GHz
Power gain
PG
14
18
—
dB
VCE = 2 V, IC = 30 mA
f = 1.8 GHz
Noise figure
NF
—
1.2
1.6
dB
VCE = 2 V, IC = 5 mA
f = 1.8 GHz
2
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