2SB1657 Ver la hoja de datos (PDF) - SavantIC Semiconductor

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Fabricante

2SB1657

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB1657

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0

VCEsat-1 Collector-emitter saturation voltage IC=-0.5A; IB=-25mA

VCEsat-2 Collector-emitter saturation voltage IC=-1A; IB=-50mA

VCEsat-3 Collector-emitter saturation voltage IC=-2A; IB=-100mA

VCEsat-4 Collector-emitter saturation voltage IC=-3A; IB=-75mA

VBEsat

Base-emitter saturation voltage

IC=-1A; IB=-50mA

ICBO

Collector cut-off current

VCB=-30V; IE=0

IEBO

Emitter cut-off current

VEB=-6V; IC=0

hFE-1

DC current gain

IC=-0.5A ; VCE=-2V

hFE-2

DC current gain

IC=-3A ; VCE=-2V

fT

Transition frequency

IC=-50mA ; VCE=-10V

COB

Collector output capacitance

IE=0;f=1MHz ; VCB=-10V

MIN TYP. MAX UNIT

-30

V

-0.15

V

-0.25

V

-0.40

V

-1.0

V

-1.5

V

-0.1

µA

-0.1

µA

150

600

70

75

MHz

60

pF

2

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