2SB776 Ver la hoja de datos (PDF) - SavantIC Semiconductor

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2SB776

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB776

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;RBE=>

V(BR)CBO Collector-base breakdown voltage

IC=-5mA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-5mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=-4A ;IB=-0.4A

VBE

Base-emitter on voltage

IC=-1A;VCE=-5V

ICBO

Collector cut-off current

VCB=-80V IE=0

IEBO

Emitter cut-off current

VEB=-4V; IC=0

hFE-1

DC current gain

IC=-1A ; VCE=-5V

hFE-2

DC current gain

IC=-4A ; VCE=-5V

fT

Transition frequency

IC=-1A ; VCE=-5V

COB

Collector output capacitance

f=1MHz;VCB=10V

Switching times

ton

Turn-on time

tstg

Storage time

tf

Fall time

IC=-1.0A; IB1=-IB2=-0.1A

RL=20E;VCC=20V

MIN TYP. MAX UNIT

-100

V

-120

V

-6

V

-0.9 -2.0

V

-1.5

V

-0.1 mA

-0.1 mA

60

200

20

15

MHz

200

pF

0.2

µs

1.2

µs

0.3

µs

hFE-1 Classifications

D

E

60-120

100-200

2

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