2SB1253 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SB1253 Datasheet PDF : 2 Pages
| |||
, (inc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Darlington Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SB1253
DESCRIPTION
• High DC Current Gain-
: hFE= 5000(Min)@lc= -5A
• Low-Collector Saturation Voltage-
: VCE(sat)= -2.5V(Max.)@lc= -5A
• Complement to Type 2SD1893
APPLICATIONS
• Designed for power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBC
Collector-Base Voltage
-130
V
VCEO
Collector-Emitter Voltage
-110
V
VEBO
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-6
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ Tc=25 C
PC
Collector Power Dissipation
@ Ta=25 C'
Tj
Junction Temperature
-10
A
50
W
3
150
'('
Tstg
Storage Temperature Range
-55-150
'C
< <~t
O—
i :2
03
PIN 1.BASE
2. CO^ LLECT OR
TC-JPFa package
- -B-"*- -•»- C
-*• S •*i—
i >Y+
A"
A
r
*"7 ' *• •*-
K
-*• **-[3
T
-J
R
mm
DIM WIN MAX
A 20,70 21.30
B 14,70 15,30
r
4.SO
5,20
D
0,90 1,10
F
3..20 3,40
K
3,70 4,30
0,50
0.70
K 16,40 17.00
L
1,9ft 2.10
H 110,30 11,00
U
6,60 6,00
R
1.80 2,20
S
3.10 3.50
T
S.70 9,30
U
0.55 0,75
N.I Seiiii-Coodiictors reserves the right to change tost conditions, parameter limits and package dimensions \vithout
notice. Information furnished by N.I Semi-Conductors is believed to he holh accurate and reliable at the lime of going
10 pros-;. llo\\e\or. N.I Semi-Conductors assumes no re.sponsihilih for any errors or omissions discovered in its use.'
NJ Semi-C'ondticiors encourages customers to verity that datasheets are current before placing orders.
Quality 5emi-Conductors
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