2SB1351 Ver la hoja de datos (PDF) - Inchange Semiconductor

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Fabricante

2SB1351

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Darlington Power Transistor

2SB1351

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -60V(Min)

·High DC Current Gain-

: hFE= 2000(Min)@IC= -10A

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·Driver for printer head solenoid, relay and motor and

general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VCBO

VCEO

Collector-Base Voltage

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current-Continuous

ICP

Collector Current-Pulse

IB

Base Current-Continuous

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

-60

V

-60

V

-6

V

-12

A

-20

A

-1

A

30

W

150

℃

Tstg

Storage Temperature Range

-55~150 ℃

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

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