2SB691 Ver la hoja de datos (PDF) - New Jersey Semiconductor

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Fabricante

2SB691

Silicon PNP Power Transistor

New Jersey Semiconductor 

Silicon PNP Power Transistor

2SB691

ELECTRICAL CHARACTERISTICS

TC=25'C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage lc= -30mA; IB= 0

-80

V

V(BR)CBO Collector-Base Breakdown Voltage

lc=-1mA; IE=0

-130

V

V(BR)EBO Emitter-Base Breakdown Voltage

|E=-1mA;lc=0

-5

V

VcE(sat)

Collector-Emitter Saturation Voltage lc= -3A; IB= -0.3A

VBE(on) Base -Emitter On Voltage

lc= -1A; VCE= -5V

ICBO

Collector Cutoff Current

Vcs=-130V; IE=0

-1.5 V

-1.5 V

-100 u A

IEBO

Emitter Cutoff Current

VEB= -5V; lc=0

-100 M A

hpE-1 DC Current Gain

lc=-1A;VcE=-5V

40

200

hFE-2

DC Current Gain

lc= -3A; VCE= -5V

20

COB

Output Capacitance

lE=0;VcB=-10V;ftest=1.0MHz

190

PF

fr

Current-Gain—Bandwidth Product

lc=-1A; VCE= -5V

7

MHz

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