PHE13005 Ver la hoja de datos (PDF) - Unspecified

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componentes Descripción

Fabricante

PHE13005

Silicon diffused power transistor

Unspecified 

WeEn Semiconductors

PHE13005

Silicon diffused power transistor

IC / IB = 4

Fig. 10. Base-emitter saturation voltage; typical values

Tj = 25 °C

Fig. 11. DC current gain as a function of collector

current; typical values

VIM = - 6 to + 8 V; VCC = 250 V; tp = 20 μs;

δ = tp / T = 0.01

RB and RL calculated from ICon and IBon requirements.

Fig. 12. Test circuit for resistive load switching

Fig. 13. Switching times waveforms for resistive load

PHE13005

Product data sheet

All information provided in this document is subject to legal disclaimers.

30 March 2018

© WeEn Semiconductors Co., Ltd. 2018. All rights reserved

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