PHE13005 Ver la hoja de datos (PDF) - Unspecified
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Fabricante
PHE13005 Datasheet PDF : 13 Pages
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WeEn Semiconductors
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VCESM
peak collector-emitter
voltage
VBE = 0 V
VCBO
collector-base voltage
IE = 0 A
VCEO
collector-emitter voltage IB = 0 A
IC
collector current
DC; Fig. 1; Fig. 2; Fig. 4
ICM
peak collector current
IB
base current
DC
IBM
peak base current
Ptot
total power dissipation
Tmb ≤ 25 °C; Fig. 3
Tstg
storage temperature
Tj
junction temperature
VEBO
emitter-base voltage
IC = 0 A
PHE13005
Silicon diffused power transistor
Values
Unit
700
V
700
V
400
V
4
A
8
A
2
A
4
A
75
W
-65 to 150
°C
150
°C
9
V
VCL(CE) ≤ 1000V; VCC = 150 V; VBB = -5 V;
LC = 200 μH; LB = 1 μH
Tj ≤ Tj (max) °C
Fig. 1. Test circuit for reverse bias safe operating area Fig. 2. Reverse bias safe operating area
PHE13005
Product data sheet
All information provided in this document is subject to legal disclaimers.
30 March 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
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