PHE13005
Silicon diffused power transistor
Rev.01 - 30 March 2018
Product data sheet
1. General description
High voltage, high speed NPN planar-passivated power switching transistor in a SOT78 plastic
package intended for use in high frequency electronic lighting ballast applications
2. Features and benefits
• Fast switching
• High voltage capability of 700 V
• Low thermal resistance
3. Applications
• Electronic lighting ballasts
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter
Absolute maximum rating
VCESM
peak collector-emitter
voltage
IC
collector current (DC)
Ptot
total power dissipation
Symbol Parameter
Static characteristics
hFE
DC current gain
Conditions
VBE = 0 V
DC; Fig. 1; Fig. 2; Fig. 4
Tmb ≤ 25 °C; Fig. 3
Conditions
IC = 1 A; VCE = 5 V; Tmb = 25 °C;
Fig. 11
IC = 2 A; VCE = 5 V; Tmb = 25 °C;
Fig. 11
Values
Unit
700
V
4
75
Min Typ
A
W
Max Unit
12 20 40
10 17 28