PHP27NQ11T
N-channel TrenchMOS standard level FET
Rev. 02 — 4 March 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Higher operating power due to low
thermal resistance
Low conduction losses due to low
on-state resistance
1.3 Applications
DC-to-DC convertors
Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
VDS
drain-source voltage
ID
drain current
Ptot
total power dissipation
Dynamic characteristics
QGD
gate-drain charge
Static characteristics
RDSon drain-source on-state
resistance
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
Tmb = 25 °C; VGS = 10 V;
see Figure 1 and 3
Tmb = 25 °C; see Figure 2
VGS = 10 V; ID = 27 A;
VDS = 80 V; Tj = 25 °C;
see Figure 11
VGS = 10 V; ID = 14 A;
Tj = 25 °C; see Figure 9
and 10
Min Typ Max Unit
-
-
110 V
-
-
27.6 A
-
-
107 W
-
12 -
nC
-
40 50 mΩ