PHX1N40E Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
PHX1N40E Datasheet PDF : 5 Pages
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Philips Semiconductors
PowerMOS transistor
Objective specification
PHX1N40E
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
waveform;
heatsink
R.H. ≤ 65% ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
-
2500 V
-
10
-
pF
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-a
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
MIN. TYP. MAX. UNIT
-
-
5 K/W
-
55
- K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
V(BR)DSS
VGS(TO)
IDSS
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source leakage current
IGSS
RDS(ON)
VSD
Gate-source leakage current
Drain-source on-state
resistance
Source-drain diode forward
voltage
CONDITIONS
VGS = 0 V; ID = 0.25 mA
VDS = VGS; ID = 0.25 mA
VDS = 400 V; VGS = 0 V; Tj = 25 ˚C
VDS = 320 V; VGS = 0 V; Tj = 125 ˚C
VGS = ±30 V; VDS = 0 V
VGS = 10 V; ID = 1.25 A
IF = 2.5 A ;VGS = 0 V
MIN.
400
2.0
-
-
-
-
-
TYP. MAX. UNIT
-
-
V
3.0 4.0 V
10 100 µA
0.1 1.0 mA
10 100 nA
3.1 3.5 Ω
1.4 2.0 V
November 1996
2
Rev 1.000
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