PF0414A Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

PF0414A

MOS FET Power Amplifier Module for DCS 1800 Handy Phone

Hitachi -> Renesas Electronics 

PF0414A

Electrical Characteristics (Tc = 25°C)

Item

Frequency range

Control voltage range

Drain cutoff current

Total efficiency

2nd harmonic distortion

3rd harmonic distortion

Input VSWR

Output power (1)

Symbol

f

VAPC

I DS

ηT

2nd H.D.

3rd H.D.

VSWR (in)

Pout (1)

Output power (2)

Pout (2)

Isolation

—

Switching time

tr, tf

Stability

—

Min Typ

1710 —

0.5 —

—

—

37

45

—

–45

—

–45

—

1.5

2.0 2.4

Max

1785

3

100

—

–35

–35

3

—

Unit

MHz

V

µA

%

dBc

dBc

—

W

1.2 1.5 —

W

—

–40 –30 dBm

—

0.9 2

µs

No parasitic oscillation —

Test Condition

VDD = 11 V, VAPC = 0 V

Pin = 2 mW, VDD = 4.8 V,

Pout = 1.8 W (at APC controlled),

RL = Rg = 50 Ω, Tc = 25°C

Pin = 2 mW, VDD = 4.8 V,

VAPC = 3 V, RL = Rg = 50 Ω,

Tc = 25°C

Pin = 2 mW, VDD = 4.3 V,

VAPC = 3 V, RL = Rg = 50 Ω,

Tc = 80°C

Pin = 2 mW, VDD = 4.8 V,

VAPC = 0.5 V, RL = Rg = 50 Ω,

Tc = 25°C

Pin = 2 mW, VDD = 4.8 V,

Pout = 1.8 W, RL = Rg = 50 Ω,

Tc = 25°C

Pin = 2 mW, VDD = 6 V,

Ids ≤ 0.9 A (only pulsed),

Pout ≤ 1.8 W (at APC controlled),

Rg = 50 Ω, t = 20 sec., Tc = 25°C,

Output VSWR = 10 : 1 All phases

2

Share Link: