PEMD6 Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
PEMD6 Datasheet PDF : 8 Pages
| |||
Philips Semiconductors
NPN/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
Product specification
PEMD6
103
handbook, halfpage
hFE
(1)
(2)
(3)
MHC024
10120−1
1
10
102
IC (mA)
TR1 (NPN); VCE = 5 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.3 DC current gain as a function of collector
current; typical values.
103
handbook, halfpage
VCEsat
(mV)
MHC025
102
(1)
(2)
(3)
1100−1
1
10
102
IC (mA)
TR1 (NPN); IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
103
handbook, halfpage
hFE
(1)
(2)
(3)
102
MHC026
10
−10−1
−1
−10
−102
IC (mA)
TR2 (PNP); VCE = −5 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.5 DC current gain as a function of collector
current; typical values.
−103
handbook, halfpage
VCEsat
(mV)
MHC027
−102
(1)
(2)
(3)
−10
−10−1
−1
−10
−102
IC (mA)
TR2 (PNP); IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.6 Collector-emitter saturation voltage as a
function of collector current; typical values.
2001 Nov 07
5
Share Link: 