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PACDN004(2010) Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza
componentes Descripción
Fabricante
PACDN004
(Rev.:2010)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
PACDN004 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
PACDN004
STANDARD OPERATING CONDITIONS
PARAMETER
Operating Temperature Range
Operating Supply Voltage (V - V )
P
N
RATING
-40 to +85
0 to 5.5
UNITS
°C
V
ELECTRICAL OPERATING CHARACTERISTICS(SEE NOTE 1)
SYMBOL PARAMETER
IP
Supply Current
VF
Diode Forward Voltage
ILEAK
Channel Leakage Current
C
Channel Input Capacitance
IN
CONDITIONS
(VP-VN)=5.5V
IF = 20mA
@ 1 MHz, V =5V,
P
V =0V, V =2.5V
N
IN
MIN
TYP
0.65
+0.1
3
MAX
10
0.95
+1.0
5
UNITS
μA
V
μA
pF
VESD
ESD Protection
Peak Discharge Voltage at any
Note 2
channel input, in system
a) Human Body Model, MIL-STD- Notes 2 and 3
+15
883, Method 3015
b) Contact discharge per
Notes 2 and 4
+8
IEC 61000-4-2 standard
c) Air discharge per IEC 61000-4-2 Notes 2 and 4
+15
V
Channel Clamp Voltage
CL
Positive Transients
Negative Transients
@15kV ESD HBM;
Notes 2 and 3
kV
kV
kV
V + 13.0
V
P
VN - 13.0
V
Note 1: All parameters specified at TA=25°C unless otherwise noted. VP = 5V, VN = 0V unless noted.
Note 2: From I/O pins to VP or VN only. VP bypassed to VN with a 0.22μF ceramic capacitor (see Application Information for
more details).
Note 3: Human Body Model per MIL-STD-883, Method 3015, CDischarge = 100pF, RDischarge = 1.5KΩ, VP = 5.0V, VN grounded.
Note 4: Standard IEC 61000-4-2 with CDischarge = 150pF, RDischarge = 330Ω, VP = 5.0V, VN grounded.
Rev. 3 | Page 4 of 9 | www.onsemi.com

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