NTBV5605(2011) Ver la hoja de datos (PDF) - ON Semiconductor
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NTBV5605 Datasheet PDF : 7 Pages
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NTB5605P, NTBV5605
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(Br)DSS
V(Br)DSS/TJ
VGS = 0 V, ID = −250 mA
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
VGS = 0 V
TJ = 25°C
VDS = −60 V TJ = 125°C
VDS = 0 V, VGS = "20 V
Gate Threshold Voltage
Drain−to−Source On Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = −250 mA
VGS = −5.0 V, ID = −8.5 A
VGS = −5.0 V, ID = −17 A
Forward Transconductance
gFS
Drain−to−Source On Voltage
VDS(on)
CHARGES, CAPACITANCES AND GATE RESISTANCE
VDS = −10 V, ID = −8.5 A
VGS = −5.0 V, ID = −8.5 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS (Note 4)
Ciss
Coss
Crss
QG(TOT)
QGS
QGD
VGS = 0 V, f = 1.0 MHz,
VDS = −25 V
VGS = −5.0 V, VDS = −48 V,
ID = −17 A
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
td(on)
tr
td(off)
tf
VGS = −5.0 V, VDD = −30 V,
ID = −17 A, RG = 9.1 W
Forward Diode Voltage
VSD
VGS = 0 V
TJ = 25°C
IS = −17 A
TJ = 125°C
Reverse Recovery Time
trr
Charge Time
Discharge Time
ta
VGS = 0 V, dIS/dt = 100 A/ms,
tb
IS = −17 A
Reverse Recovery Charge
QRR
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
−60
−1.0
Typ
Max
Unit
V
−64
mV/°C
−1.0
mA
−10
"100 nA
−1.5 −2.0
V
120
140
mW
140
12
S
−1.3
V
730 1190
211
300
pF
67
120
13
22
4.0
nC
7.0
12.5
25
122
183
ns
29
58
75
150
−1.55 −2.5
V
−1.4
60
39
ns
21
0.14
nC
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