NTA4001NT1G(2011) Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
NTA4001NT1G Datasheet PDF : 5 Pages
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NTA4001N, NVA4001N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
V(BR)DSS
IDSS
IGSS
VGS = 0 V, ID = 100 mA
VGS = 0 V, VDS = 20 V
VDS = 0 V, VGS = ±10 V
Gate Threshold Voltage
Drain−to−Source On Resistance
Forward Transconductance
CAPACITANCES
VGS(TH)
RDS(on)
gFS
VDS = 3 V, ID = 100 mA
VGS = 4.5 V, ID = 10 mA
VGS = 2.5 V, ID = 10 mA
VDS = 3 V, ID = 10 mA
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 3)
CISS
COSS
CRSS
VDS = 5 V, f = 1 MHz,
VGS = 0 V
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
td(ON)
tr
td(OFF)
tf
VGS = 4.5 V, VDS = 5 V,
ID = 10 mA, RG = 10 W
Forward Diode Voltage
VSD
VGS = 0 V, IS = 10 mA
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
Min Typ Max Unit
20
V
1.0 mA
±100 mA
0.5
1.0
1.5 V
1.5
3.0
W
2.2
3.5
80
mS
11.5 20
10
15 pF
3.5
6.0
13
ns
15
98
ns
60
0.66 0.8 V
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