D2150 Ver la hoja de datos (PDF) - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

Número de pieza

componentes Descripción

Fabricante

D2150

Plastic-Encapsulate Transistors

GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. 

Plastic-Encapsulate Transistors

FEATURES

Excellent current-to-gain characteristics

Low collector saturation voltage VCE(sat)

VCE(sat)=0.5V(max) for IC/IB=2A/0.1A

2SD2150(NPN)

MAXIMUM RATINGS (TA=25 unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

VCBO

40

V

VCEO

20

V

VEBO

6

V

IC

2000

mA

PC

500

mW

Junction Temperature

TJ

150

Storage Temperature

Tstg

-55-150

1. BASE

2. COLLECTO

3. EMITTER

SOT-89

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

VCBO

IC =50uA, IE=0

40

V

Collector-emitter breakdown voltage

VCEO

IC =1mA, IB=0

20

V

Emitter-base breakdown voltage

VEBO

IE=50μA, IC=0

6

V

Collector cut-off current

ICBO

VCB=30V, IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=5V, IC=0

0.1

μA

DC current gain

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

*Pulse test: tp≤300μS, δ≤0.02.

CLASSIFICATION OF HFE

Marking

CFR

hFE *

VCE=2V, IC=100mA

180

VCE(sat) *

IC=2A, IB=100mA

560

0.5

V

VCE=2V,IC=500mA

fT*

f=100MHz

290

MHz

Cob

VCB=10V, IE=0, f=1MHz

25

pF

CFS

Range

180-390

270-560

GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.

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