NE325S01-T1 Ver la hoja de datos (PDF) - NEC => Renesas Technology
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NE325S01-T1 Datasheet PDF : 12 Pages
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NE325S01
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
SYMBOL MIN. TYP.
Gate to Source Leak Current
IGSO
0.5
Saturated Drain Current
IDSS
20
60
Gate to Source Cutoff Voltage
VGS(off)
–0.2 –0.7
Transconductance
gm
45
60
Noise Figure
NF
0.45
Associated Gain
Ga
11.0 12.5
MAX.
10
90
–2.0
0.55
UNIT
µA
mA
V
mS
dB
dB
TEST CONDITIONS
VGS = –3 V
VDS = 2 V, VGS = 0 V
VDS = 2 V, ID = 100 µA
VDS = 2V, ID = 10 mA
VDS = 2 V, ID = 10 mA, f = 12 GHz
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
250
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
200
150
100
50
0
50
100 150 200 250
TA - Ambient Temperature - ˚C
80
VGS = 0 V
60
–0.2 V
40
–0.4 V
20
–0.6 V
–0.8 V
0
1.5
3.0
VDS - Drain to Source Voltage - V
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
VDS = 2 V
60
40
20
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
24
20
MSG.
VDS = 2 V
ID = 10 mA
16
MAG.
|S21S|2
12
0
–2.0
–1.0
0
VGS - Gate to Source Voltage - V
8
4
1
2
4 6 8 10 14 20 30
f - Frequency - GHz
2
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