NDP7060 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
NDP7060 Datasheet PDF : 12 Pages
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Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter
Conditions
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
W DSS
Single Pulse Drain-Source Avalanche
Energy
VDD = 25 V, ID = 75 A
IAR
Maximum Drain-Source Avalanche Current
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
VGS = 0 V, ID = 250 µA
VDS = 60 V, VGS = 0 V
IGSSF
Gate - Body Leakage, Forward
IGSSR
Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 1)
VGS(th)
Gate Threshold Voltage
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
VDS = VGS, ID = 250 µA
RDS(ON) Static Drain-Source On-Resistance
VGS = 10 V, ID = 40 A
ID(on)
On-State Drain Current
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 1)
tD(on)
Turn - On Delay Time
tr
Turn - On Rise Time
tD(off)
Turn - Off Delay Time
tf
Turn - Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VGS = 10 V, VDS = 10 V
VDS = 10 V, ID = 37.5 A
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VDD = 30 V, ID = 75 A,
VGS = 10 V, RGEN = 5 Ω
VDS = 48 V,
ID = 75 A, VGS = 10 V
Min Typ Max Units
550 mJ
75
A
60
TJ = 125°C
V
250 µA
1
mA
100 nA
-100 nA
2
2.8
4
V
TJ = 125°C 1.4 2.1
3.6
0.01 0.013 Ω
TJ = 125°C
0.015 0.024
75
A
15 39
S
2960 3600 pF
1130 1600 pF
380 800 pF
17
30
nS
128 400 nS
54
80
nS
90 200 nS
100 115 nC
14.5
nC
51
nC
NDP7060.SAM
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