NDB410A Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
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Fabricante
NDB410A Datasheet PDF : 6 Pages
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Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter
Conditions
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
EAS
Single Pulse Drain-Source
VDD = 25 V, ID = 9 A
Avalanche Energy
IAR
Maximum Drain-Source Avalanche Current
Type Min Typ Max Units
NDP410AE
NDP410BE
NDB410AE
NDB410BE
50 mJ
9
A
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown
VGS = 0 V, ID = 250 µA
ALL
100
V
Voltage
IDSS
Zero Gate Voltage Drain
Current
VDS = 100 V,
VGS = 0 V
ALL
TJ = 125°C
IGSSF
Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V
ALL
IGSSR
Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V
ALL
ON CHARACTERISTICS (Note 2)
250 µA
1 mA
100 nA
-100 nA
VGS(th)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source
On-Resistance
ID(on)
On-State Drain Current
VDS = VGS,
ID = 250 µA
ALL
TJ = 125°C
2 2.9 4
V
1.4 2.3 3.6 V
VGS = 10 V,
ID = 4.5 A
TJ = 125°C
NDP410A
NDP410AE
NDB410A
NDB410AE
0.2 0.25 Ω
0.38 0.5 Ω
VGS = 10 V,
ID = 4 A
TJ = 125°C
NDP410B
NDP410BE
NDB410B
NDB410BE
0.3 Ω
0.6 Ω
VGS = 10 V, VDS = 10 V
NDP410A 9
A
NDP410AE
NDB410A
NDB410AE
NDP410B 8
A
NDP410BE
NDB410B
NDB410BE
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
VDS = 10 V, ID = 4.5 A
ALL
3 4.8
S
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Crss
Reverse Transfer Capacitance
ALL
385 500 pF
ALL
80 100 pF
ALL
20 30 pF
NDP410.SAM
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