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MMBR521LT1 Datasheet PDF : 8 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
PNP Silicon
High-Frequency Transistor
Designed primarily for use in the high–gain, low–noise small–signal
amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast
switching times.
• High Current Gain–Bandwidth Product —
fT = 3.4 GHz (Typ) @ IC = – 35 mAdc (MMBR521LT1)
fT = 4.2 GHz (Typ) @ IC = – 50 mAdc (MRF5211LT1)
• Low Noise Figure @ f = 1.0 GHz —
NF(matched) = 2.5 dB (Typ) (MMBR521LT1)
NF(matched) = 2.8 dB (Typ) (MRF5211LT1)
• High Power Gain — Gpe (matched) = 11 dB (Typ)
• Guaranteed RF Parameters
• Surface Mounted SOT–23 (MMBR521LT1) & SOT–143 (MRF5211LT1)
Offer Improved RF Performance
Lower Package Parasitics
Higher Gain
• Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
MAXIMUM RATINGS
Ratings
Symbol Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Power Dissipation (1) TC = 75°C,
Derate linearly above TC = 75°C @
All
Collector Current — Continuous
Maximum Junction Temperature
Storage Temperature
All
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
PD(max)
–10
– 20
– 2.5
0.333
4.44
Vdc
Vdc
Vdc
W
mW/°C
IC
– 70
mA
TJmax
150
°C
Tstg – 55 to +150 °C
Ratings
Symbol Value
Unit
Thermal Resistance, Junction to Case
(MMBR521LT1, MRF5211LT1)
RθJC
225
°C/W
DEVICE MARKING
MMBR521LT1 = 7M
MRF5211LT1 = 04
NOTE:
1. Case Temperature is measured on the collector lead closest to the package. For case
temperatures above + 75°C: PDISP(max) = (TJmax – TC) / RθJC
Order this document
by MMBR521LT1/D
MMBR521LT1
MRF5211LT1
IC = – 70 mA
HIGH–FREQUENCY
TRANSISTOR
PNP SILICON
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
(TO–236AA/AB)
MMBR521LT1
CASE 318A–05, STYLE 1
SOT–143
LOW PROFILE
MRF5211LT1
REV 7
©MMOotoTrOolaR, OIncL.A19R95F DEVICE DATA
MMBR521LT1 MRF5211LT1
1
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