MSASC100W100HR Ver la hoja de datos (PDF) - Microsemi Corporation

Número de pieza

componentes Descripción

Fabricante

MSASC100W100HR

LOW LEAKAGE SCHOTTKY DIODE

Microsemi Corporation 

2830 S. Fairview St.

Santa Ana, CA 92704

PH: (714) 979-8220

FAX: (714) 966-5256

Features

• Tungsten schottky barrier

• Oxide passivated structure for very low leakage currents

• Guard ring protection for increased reverse energy capability

• Epitaxial structure minimizes forward voltage drop

• Hermetically sealed, low profile ceramic surface mount power package

• Low package inductance

• Very low thermal resistance

• Available as standard polarity (strap-to-anode, MSASC100W100H)

and reverse polarity (strap-to-cathode: MSASC100W100HR)

MSASC100W100H

MSASC100W100HR

100 Volts

100 Amps

LOW LEAKAGE

SCHOTTKY DIODE

Maximum Ratings @ 25°C (unless otherwise specified)

DESCRIPTION

SYMBOL

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Forward Current, Tc≤ 135°C

derating, forward current, Tc≥ 135°C

Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave

Peak Repetitive Reverse Surge Current, tp= 1µs, f= 1kHz

Junction Temperature Range

Storage Temperature Range

Thermal Resistance, Junction to Case:

MSASC100W100H

VRRM

VRWM

VR

IF(ave)

dIF/dT

IFSM

IRRM

Tj

Tstg

θJC

MAX.

100

100

100

100

2.5

500

2

-65 to +175

-65 to +175

0.35

0.5

UNIT

Volts

Volts

Volts

Amps

Amps/°C

Amps

Amp

°C

°C

°C/W

Mechanical Outline

Datasheet# MSC0306A

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