MMST4403 Ver la hoja de datos (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

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MMST4403

SOT-323 Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

JC(T

SOT-323 Plastic-Encapsulate Transistors

MMST4403 TRANSISTOR (PNP)

FEATURES

 Complementary To MMST4401

 Small Surface Mount Package

MARKING:K3T

SOT–323

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

VCBO Collector-Base Voltage

-40

VCEO Collector-Emitter Voltage

-40

VEBO Emitter-Base Voltage

-5

IC

Collector Current

-600

PC

Collector Power Dissipation

200

RΘJA Thermal Resistance From Junction To Ambient

625

Tj

Junction Temperature

Tstg

Storage Temperature

150

-55～+150

Unit

V

V

V

mA

mW

℃/W

℃

℃

1. BASE

2. EMITTER

3. COLLECTOR

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max Unit

Collector-base breakdown voltage

V(BR)CBO IC=-100µA, IE=0

-40

V

Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0

-40

V

Emitter-base breakdown voltage

V(BR)EBO IE=-100µA, IC=0

-5

V

Collector cut-off current

ICBO

VCB=-35V, IE=0

-100

nA

Collector cut-off current

ICEX

VCE=-35V, VBE=-0.4V

-100

nA

VCE=-1V, IC=-100µA

30

VCE=-1V, IC=-1mA

60

DC current gain

hFE

VCE=-1V, IC=-10mA

100

VCE=-2V, IC=-150mA

100

300

VCE=-2V, IC=-500mA

20

Collector-emitter saturation voltage

VCE(sat)

IC=-150mA, IB=-15mA

IC=-500mA, IB=-50mA

-0.4

V

-0.75

V

Base-emitter saturation voltage

VBE(sat)

IC=-150mA, IB=-15mA

IC=-500mA, IB=-50mA

-0.75

-0.95

V

-1.3

V

Transition frequency

fT

VCE=-10V,IC=-20mA , f=100MHz

200

MHz

Collector output capacitance

Cob

VCB=-10V, IE=0, f=1MHz

8.5

pF

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