MKI 50-06 A7
10.0
mJ
100
td(on)
ns
7.5
Eon
5.0
2.5
Eon
0.0
0
40
75
t
tr
50
VCE = 300V
VGE = ±15V
RG = 22Ω 25
TVJ = 125°C
0
80 A 120
IC
Fig. 7 Typ. turn on energy and switching
times versus collector current
4
mJ
Eon
3
2
80
td(on)
ns
Eon
60 t
tr
VCE = 300V
VGE = ±15V
IC = 50A
40
TVJ = 125°C
1
20
0 10 20 30 40 50 Ω 60
RG
Fig. 9 Typ. turn on energy and switching
times versus gate resistor
120
A
ICM 90
60
30
RG = 22 Ω
TVJ = 125°C
0
0 100 200 300 400 500 600 700 V
VCE
Fig. 11 Reverse biased safe operating area
RBSOA
4
400
mJ
Eoff 3
2
1
Eoff
td(off)
VCE = 300V
VGE = ±15V
RG = 22Ω
TVJ = 125°C
ns
300
t
200
100
tf
0
0
0
40
80 A 120
IC
Fig. 8 Typ. turn off energy and switching
times versus collector current
3
mJ
Eoff
2
1
600
Eoff
td(off)
VCE = 300V
VGE = ±15V
IC = 50A
TVJ = 125°C
ns
400 t
200
0
tf
0
0 10 20 30 40 50 Ω 60
RG
Fig.10 Typ. turn off energy and switching
times versus gate resistor
10
K/W
1
ZthJC
0.1
diode
IGBT
0.01
0.001
single pulse
0.0001
0.00001 0.0001 0.001 0.01
0.1
t
MWI5006A7
1 s 10
Fig. 12 Typ. transient thermal impedance
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