MKI50-06A7 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
MKI50-06A7 Datasheet PDF : 4 Pages
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MKI 50-06 A7
Diodes
Symbol
IF25
IF80
Conditions
TC = 25°C
TC = 80°C
Maximum Ratings
72
A
45
A
Equivalent Circuits for Simulation
Conduction
Symbol
VF
IRM
trr
R
thJC
Module
Symbol
TVJ
Tstg
VISOL
Md
Symbol
Rpin-chip
dS
d
A
R
thCH
Weight
Conditions
IF = 50 A; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
IF = 30 A; diF/dt = -500 A/µs; TVJ = 125°C
VR = 300 V; VGE = 0 V
(per diode)
Characteristic Values
min. typ. max.
1.6 1.8 V
1.3
V
25
A
90
ns
1.19 K/W
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 0.82 V; R0 = 28 mΩ
Free Wheeling Diode (typ. at TJ = 125°C)
V0 = 0.89 V; R0 = 8 mΩ
Thermal Response
Conditions
IISOL ≤ 1 mA; 50/60 Hz
Mounting torque (M5)
Conditions
Creepage distance on surface
Strike distance in air
with heatsink compound
Maximum Ratings
-40...+150
°C
-40...+125
°C
2500
V~
2.7 - 3.3
Nm
Characteristic Values
min. typ. max.
5
mΩ
6
mm
6
mm
0.02
K/W
180
g
IGBT (typ.)
Cth1 = 0.201 J/K; Rth1 = 0.42 K/W
Cth2 = 1.252 J/K; Rth2 = 0.131 K/W
Free Wheeling Diode (typ.)
Cth1 = 0.116 J/K; Rth1 = 0.973 K/W
Cth2 = 0.88 J/K; Rth2 = 0.277 K/W
Dimensions in mm (1 mm = 0.0394")
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