MJD29 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
MJD29 Datasheet PDF : 4 Pages
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MJD29/29C
General Purpose Amplifier
Low Speed Switching Applications
• Load Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP29 and TIP29C
1
D-PAK 1
I-PAK
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Parameter
Collector-Base Voltage
: MJD29
: MJD29C
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Collector-Emitter Voltage
: MJD29
: MJD29C
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
ICEO
ICES
IEBO
hFE
Parameter
*Collector-Emitter Sustaining Voltage
: MJD29
: MJD29C
Collector Cut-off Current
: MJD29
: MJD29C
Collector Cut-off Current
: MJD29
: MJD29C
Emitter Cut-off Current
*DC Current Gain
VCE(sat)
*Collector-Emitter Saturation Voltage
VBE(on)
*Base-Emitter ON Voltage
fT
Current Gain Bandwidth Product
* Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 2%
Test Condition
IC = 30mA, IB = 0
VCE = 40V, IB = 0
VCE = 60V, IB = 0
VCE = 40V, VBE = 0
VCE = 100V, VBE = 0
VBE = 5V, IC = 0
VCE = 4V, IC = 0.2A
VCE = 4V, IC = 1A
IC = 1A, IB = 125mA
VCE = 4A, IC = 1A
VCE = 10V, IC = 200mA
Value
40
100
40
100
5
1
3
0.4
15
1.56
150
- 65 ~ 150
Min.
40
100
40
15
3
Units
V
V
V
V
V
A
A
A
W
W
°C
°C
Max. Units
V
V
50
µA
50
µA
20
µA
20
µA
1
mA
75
0.7
V
1.3
V
MHz
©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
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