MJB44H11 Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza

componentes Descripción

Fabricante

MJB44H11

Complementary Power Transistors

ON Semiconductor 

MJB44H11 (NPN), MJB45H11 (PNP)

100

50

30

20

10

5.0

3.0

2.0

1.0

0.5

0.3

0.2

0.1

1.0

TC ≤ 70° C

dc

DUTY CYCLE ≤ 50%

1.0 ms

100 ms

10 ms

1.0 ms

2.0 3.0 5.0 7.0 10

20 30 50 70 100

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 2. Maximum Rated Forward Bias

Safe Operating Area

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 2 is based on TJ(pk) = 150°C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

v 150°C. TJ(pk) may be calculated from the data in

Figure 1. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

TA TC

3.0 60

2.0 40

1.0 20

TC

TA

00

0 20 40 60 80 100 120 140 160

T, TEMPERATURE (°C)

Figure 3. Power Derating

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