MJD128T4G(2012) Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza

componentes Descripción

Fabricante

MJD128T4G
(Rev.:2012)

Complementary Darlington Power Transistor

ON Semiconductor 

MJD128T4G, NJVMJD128T4G (PNP)

20

15

10

5

3

2

1

0.5

0.3

0.2

0.1

0.05

0.03

0.02

1

500 ms

100 ms

TJ = 150C

1 ms

5 ms

BONDING WIRE LIMIT

THERMAL LIMIT

TC = 25C (SINGLE PULSE)

dc

SECOND BREAKDOWN LIMIT

CURVES APPLY BELOW RATED VCEO

2 3 5 7 10 20 30 50 100 120 200

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 12. Maximum Forward Bias

Safe Operating REA

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 12 is based on TJ(pk) = 150C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

< 150C. TJ(pk) may be calculated from the data in

Figure 11. At high case temperatures, thermal limitations

will reduce the power that can be handled to values less than

the limitations imposed by second breakdown.

COLLECTOR

BASE

 8 k  120

EMITTER

Figure 13. Darlington Schematic

http://onsemi.com

5

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