MJD128T4G(2012) Ver la hoja de datos (PDF) - ON Semiconductor
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MJD128T4G Datasheet PDF : 6 Pages
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MJD128T4G, NJVMJD128T4G (PNP)
TYPICAL ELECTRICAL CHARACTERISTICS
20,000
10,000
7000
5000
3000
2000
1000
700
500
TJ = 150C
25C
- 55C
VCE = 4 V
300
200
0.1
0.2 0.3 0.5 0.7 1
2 3 5 7 10
IC, COLLECTOR CURRENT (AMP)
Figure 2. DC Current Gain
3
TJ = 25C
2.5
2
1.5
VBE @ VCE = 4 V
1 VBE(sat) @ IC/IB = 250
0.5
0.1
VCE(sat) @ IC/IB = 250
0.2 0.3 0.5 0.7 1
23 5
IC, COLLECTOR CURRENT (AMP)
Figure 4. “On” Voltages
105
REVERSE
104
FORWARD
7 10
103
VCE = 30 V
102
TJ = 150C
101
100C
100
25C
10-1
+ 0.6 + 0.4 + 0.2 0 - 0.2 - 0.4 - 0.6 - 0.8 - 1 - 1.2 - 1.4
VBE, BASE−EMITTER VOLTAGE (VOLTS)
Figure 6. Collector Cut−Off Region
3
2.6
IC = 2 A
4A
2.2
TJ = 25C
6A
1.8
1.4
1
0.3 0.5 0.7 1
23
5 7 10
20 30
IB, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
+ 5
+ 4 *IC/IB hFE/3
+ 3
+ 2
+ 1
0
25C to 150C
- 1 qVC for VCE(sat)
- 2
- 55C to 25C
- 3 qVB for VBE 25C to 150C
- 4
- 55C to 25C
- 5
0.1
0.2 0.3 0.5
1
23
IC, COLLECTOR CURRENT (AMP)
5 7 10
10,000
5000
3000
2000
1000
500
300
200
100
50
30
20
10
1
Figure 5. Temperature Coefficients
TC = 25C
VCE = 4 Vdc
IC = 3 Adc
PNP
NPN
2
5 10 20
50 100 200 500 1000
f, FREQUENCY (kHz)
Figure 7. Small−Signal Current Gain
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