MJD128T4G(2012) Ver la hoja de datos (PDF) - ON Semiconductor

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MJD128T4G
(Rev.:2012)

Complementary Darlington Power Transistor

ON Semiconductor 

MJD128T4G, NJVMJD128T4G (PNP)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(IC = 30 mAdc, IB = 0)

VCEO(sus)

Vdc

120

−

Collector Cutoff Current

(VCE = 120 Vdc, IB = 0)

ICEO

−

mA

5

Collector Cutoff Current

(VCB = 100 Vdc, IE = 0)

ICBO

−

mAdc

10

Emitter Cutoff Current

(VBE = 5 Vdc, IC = 0)

ON CHARACTERISTICS

DC Current Gain

(IC = 4 Adc, VCE = 4 Vdc)

(IC = 8 Adc, VCE = 4 Vdc)

IEBO

−

mAdc

2

hFE

−

1000

12,000

100

−

Collector−Emitter Saturation Voltage

(IC = 4 Adc, IB = 16 mAdc)

(IC = 8 Adc, IB = 80 mAdc)

VCE(sat)

−

−

Vdc

2

4

Base−Emitter Saturation Voltage (1)

(IC = 8 Adc, IB = 80 mAdc)

VBE(sat)

−

Vdc

4.5

Base−Emitter On Voltage

(IC = 4 Adc, VCE = 4 Vdc)

DYNAMIC CHARACTERISTICS

Current−Gain−Bandwidth Product

(IC = 3 Adc, VCE = 4 Vdc, f = 1 MHz)

VBE(on)

−

|hfe|

4

Vdc

2.8

MHz

−

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

Cob

pF

−

300

Small−Signal Current Gain

(IC = 3 Adc, VCE = 4 Vdc, f = 1 kHz)

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

hfe

−

300

−

TA TC

2.5 25

2 20

1.5 15

1 10

0.5 5

TC

TA

SURFACE

MOUNT

00

25

50

75

100

125

150

T, TEMPERATURE (C)

Figure 1. Power Derating

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