MJ13335 Ver la hoja de datos (PDF) - Mospec Semiconductor

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Fabricante

MJ13335

SWITCHMODE SERIES NPN SILICON TRANSISTORS

Mospec Semiconductor 

MOSPEC

SWITCHMODE SERIES

NPN SILICON TRANSISTORS

…designed for high-voltage, high-speed, power switching in inductive

circuits where fall time is critical , They are particularly suited for line

operated switchmode applications such as:

* Switching Regulators

* Inverters

* Solenoid and relay drivers

* Motor Controls

* Deflection Circuits

Fast Turn-off Times

400ns Inductive Fall Time –25oC( Typ )

2.5 us Inductive Storage Time—25oC( Typ )

Operating Temperature Range –65oC to +200oC

100oC performance Specified for:

Reversed Biased SOA with Inductive Loads

Switching Times with Inductive Loads

Leakage Currents

NPN

MJ13332

MJ13333

MJ13334

MJ13335

20 AMPERES

POWER TRANSISTOR

NPN SILICON

350-500 VOLTS

175 WATTS

MAXIMUM RATINGS

Rating

Collector-Emitter Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Peak

Base Current

Total Device Dissipation @ TC=25oC

Derate above 25oC

Operating and Storage Junction

Temperature Range

Symbol MJ13332 MJ13333 MJ13334 MJ13335 Unit

VCEV

650 700 750 800

V

VCEO

350 400 450 500

V

VEB

6.0

V

IC

ICM

20

30

A

IB

10

A

PD

275

Watts

1.0

W/oC

TJ , TSTG

-65 to +200

oC

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Thermal Resistance to Case

RθJC

1.0

Unit

oC/W

TO-3

PIN 1.BASE

2.EMITTER

COLLECTOR(CASE)

DIM MILLIMETERS

MIN MAX

A 38.75 39.96

B 19.28 22.23

C

7.96 9.28

D 11.18 12.19

E 25.20 26.67

F

0.92 1.09

G 1.38 1.62

H 29.90 30.40

I 16.64 17.30

J

3.88 4.36

K 10.67 11.18

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