MJD32CT4G Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza

componentes Descripción

Fabricante

MJD32CT4G

Complementary Power Transistors DPAK For Surface Mount Applications

ON Semiconductor 

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,

MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 30 mAdc, IB = 0)

MJD31, NJVMJD31T4G, MJD32, NJVMJD32T4G

MJD31C, NJVMJD31CT4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G

Collector Cutoff Current

(VCE = 40 Vdc, IB = 0)

MJD31, NJVMJD31T4G, MJD32, NJVMJD32T4G

(VCE = 60 Vdc, IB = 0)

MJD31C, NJVMJD31CT4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G

Collector Cutoff Current

(VCE = Rated VCEO, VEB = 0)

Emitter Cutoff Current

(VBE = 5 Vdc, IC = 0)

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 1 Adc, VCE = 4 Vdc)

(IC = 3 Adc, VCE = 4 Vdc)

Collector−Emitter Saturation Voltage

(IC = 3 Adc, IB = 375 mAdc)

Base−Emitter On Voltage

(IC = 3 Adc, VCE = 4 Vdc)

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product (Note 2)

(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz)

Small−Signal Current Gain

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz)

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

2. fT = ⎪hfe⎪• ftest.

Symbol

Min

VCEO(sus)

40

100

ICEO

−

−

ICES

−

IEBO

−

hFE

25

10

VCE(sat)

−

VBE(on)

−

fT

3

hfe

20

Max

Unit

Vdc

−

−

mAdc

50

50

mAdc

20

mAdc

1

−

50

Vdc

1.2

Vdc

1.8

MHz

−

−

http://onsemi.com

3

Share Link: