PBL386302SOS Ver la hoja de datos (PDF) - Ericsson
Número de pieza
componentes Descripción
Fabricante
PBL386302SOS Datasheet PDF : 16 Pages
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PBL 386 30/2
Ref
Parameter
fig
Loop current detector
Programmable threshold, I
LTh
Ring trip comparator
Offset voltage, ∆VDTDR
Input bias current, IB
Input common mode range, VDT, VDR
Ring relay driver
Saturation voltage, V
OL
Off state leakage current, I
Lk
Digital inputs (C1, C2)
Input low voltage, VIL
Input high voltage, VIH
Input low current, IIL
Input high current, IIH
Detector output (DET)
Output low voltage
Internal pull-up resistor
Power dissipation (VBat = -48V,VBat2 = -32V)
P1
P2
P3
P
4
Conditions
Min
Typ
I = 500
LTh
RLD
RLD in kΩ, ILTh ≥ 7 mA
Source resistance, RS = 0 Ω
IB = (IDT + IDR)/2
I = 50 mA
OL
V = 12 V
OH
VIL = 0.5
VIH = 2.5 V
IOL = 0.5 mA
0.85·I I
LTh LTh
-20
0
-200
-20
VBat+1
0.2
0
2.5
15
Open circuit state, C1, C2 = 0, 0
10
Active state, C1, C2 = 0, 1
Longitudinal current = 0 mA, I L=0 mA (on-hook) 65
RL =300Ω (off-hook)
730
R
L
=800Ω
(off-hook)
360
Power supply currents (VBat = -48V)
VCC current, ICC
VBat current, IBat
VCC current, ICC
VBat current, IBat
Power supply rejection ratios
VCC to 2- or 4-wire port
VBat to 2- or 4-wire port
VBat2 to 2- or 4-wire port
Temperature guard
Junction threshold temperature, T
JG
Thermal resistance
28-pin PLCC, θJP28plcc
24-pin SOIC, θJP24soic
24-pin SSOP, θJP24ssop
Open circuit state
Active state
On-hook, Long Current = 0 mA
Active State
f= 1kHz, Vn = 100mV
-0.10
-1.5
30
36
40
1.2
-0.05
2.8
-1.0
42
45
60
145
39
43
55
Max
Unit
1.15·I mA
LTh
20
mV
200
nA
-1
V
0.5
V
10
µA
0.5
V
VCC
V
-50
µA
50
µA
0.7
V
kΩ
15
mW
85
mW
mW
mW
2.0
mA
mA
4.0
mA
mA
dB
dB
dB
°C
°C/W
°C/W
°C/W
6
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