2SB645 Ver la hoja de datos (PDF) - New Jersey Semiconductor

Número de pieza

componentes Descripción

Fabricante

2SB645

Silicon PNP Power Transistors

New Jersey Semiconductor 

Silicon PNP Power Transistors

2SB645

ELECTRICAL CHARACTERISTICS

Tj=25°C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage lc=-0.1A; IB=0

V(BR)EBO Emitter-Base Breakdown Voltage

!E=-10mA; lc=0

VcE(sat) Collector-Emitter Saturation Voltage lc= -5A; IB= -0.5A

VBE(OH) Base-Emitter On Voltage

lc= -5A; VCE= -5V

ICBO

Collector Cutoff Current

Vce=-100V; IE=0

IEBO

Emitter Cutoff Current

VEB= -5V;lc= 0

hpE

DC Current Gain

lc= -1A; VCE= -5V

COB

Output Capacitance

lE=0;VCB=-10V;f=1MHz

fi

Current-Gain—Bandwidth Product

lc=-1A;VCE=-10V

MIN TYP. MAX UNIT

-200

V

-5

V

-2.0

V

-1.5

V

-0.1

mA

-0.1 mA

40

140

450

PF

12

MHz

Classifications

R

O

40-80 70-140

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