MBR6045PT Ver la hoja de datos (PDF) - Inchange Semiconductor

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componentes Descripción

Fabricante

MBR6045PT

Schottky Barrier Rectifier

Inchange Semiconductor 

Schottky Barrier Rectifier

INCHANGE Semiconductor

MBR6045PT

FEATURES

·Low Forward Voltage

·Low Power Loss,High Efficiency

·High Surge Capability

·175℃ Operating Junction Temperature

·Pb-Free Package is Available

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·Power Supply-Output Rectification

·Power Management

·Instrumentation

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VRRM

VRWM

VR

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

45

V

IF(AV)

Average Rectified Forward Current

60

A

Nonrepetitive Peak Surge Current

IFSM

8.3ms single half sine-wave superimposed 500

A

on rated load conditions

IRRM

Peak Repetitive Reverse Surge Current

(20μs, 1.0kHz)

2.0

A

TJ

Junction Temperature

-65~175 ℃

Tstg

Storage Temperature Range

-65~175 ℃

dv/dt Voltage Rate of Change (Rated VR)

10,000 V/μs

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

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