KTB1124(2001) Ver la hoja de datos (PDF) - KEC
Número de pieza
componentes Descripción
Fabricante
KTB1124 Datasheet PDF : 3 Pages
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SEMICONDUCTOR
TECHNICAL DATA
VOLTAGE REGULATORS, RELAY DRIVERS
LAMP DRIVERS, ELECTRICAL EQUIPMENT
FEATURES
ᴌAdoption of MBIT processes.
ᴌLow collector-to-emitter saturation voltage.
ᴌFast switching speed.
ᴌLarge current capacity and wide ASO.
ᴌComplementary to KTD1624.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Vollector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current(Pulse)
Collector Power Dissipation
Junction Temperature
VCBO
-60
VCEO
-50
VEBO
-6
IC
-3
ICP
-6
PC
500
PC*
1
Tj
150
Storage Temperature Range
Tstg
-55ᴕ150
* : Package mounted on ceramic substrate(250mm2ᴧ0.8t)
UNIT
V
V
V
A
A
mW
W
ᴱ
ᴱ
KTB1124
EPITAXIAL PLANAR PNP TRANSISTOR
A
C
H
G
D
D
K
FF
1 23
DIM
A
B
C
D
E
F
G
H
J
K
MILLIMETERS
4.70 MAX
2.50 +_0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50+_ 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
SOT-89
Marking
hFE Rank
Type Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
ICBO
IEBO
hFE(1) (Note)
hFE (2)
VCE(sat)
VBE(sat)
fT
Cob
VCB=-40V, IE=0
VEB=-4V, IC=0
VCE=-2V, IC=-100Ὠ
VCE=-2V, IC=-3A
IC=-2A, IB=-100Ὠ
IC=-2A, IB=-100Ὠ
VCE=-10V, IC=-50Ὠ
VCB=-10V, f=1ὲ
Switching
Time
Turn-on Time
Storage Time
ton
PW=20µs
DC <= 1%
I B1
R8
INPUT
IB2
VR
25
tstg
50
100Ω
470Ω
Fall Time
tf
5V
-25V
-10IB1=10IB2 =I C =1A
Note : hFE (1) Classification A:100ᴕ200, B:140ᴕ280, C:200ᴕ400
MIN.
-
-
100
35
-
-
-
-
TYP.
-
-
-
-
-0.35
-0.94
150
39
MAX.
-1
-1
400
-
-0.7
-1.2
-
-
UNIT.
ὧ
ὧ
V
V
ὲ
ὸ
-
70
-
-
450
-
nS
-
35
-
2001. 12. 6
Revision No : 3
1/3
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