FQP5P20 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FQP5P20 Datasheet PDF : 8 Pages
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• Improved dv/dt capability
101 Top :
V
GS
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
100 Bottom : -5.5 V
10-1
※ Notes :
1. 250μs Pulse Test
2. T = 25℃
C
10-2
10-1
100
101
Typical -V , Drain-Source Voltage [V]
DS
Characteristics
Figure 1. On-Region Characteristics
3.0
2.4
VGS = - 10V
V = - 20V
GS
1.8
1.2
0.6
※ Note : TJ = 25℃
0.0
0
3
6
9
12
-ID , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
750
600
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
450
C
iss
C
oss
300
※ Notes :
150
C
rss
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100
101
-VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
100
10-1
2
150℃
25℃
-55℃
※ Notes :
1. VDS = -40V
2. 250μs Pulse Test
4
6
8
10
-VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.0
150℃ 25℃
※ Notes :
1. V = 0V
GS
2. 250μs Pulse Test
0.5
1.0
1.5
2.0
2.5
3.0
-VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = -40V
10
DS
VDS = -100V
8
VDS = -160V
6
4
2
※ Note : ID = -4.8 A
0
0
2
4
6
8
10
12
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor International
Rev. A, May 2000
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